THE INTERSUBBAND OPTICAL ABSORPTION COEFFICIENT OF THE QD WITH ACCEPTOR IMPURITY UNDER APPLIED ELECTRIC FIELD

Abstract

In this work, a spherical quantum dot (QD) under the influence of an externalelectric field is investigated. A multi-band model of the valence band is applied. The influence of off-center acceptor impurity, electric field and QD size dispersion on the absorption coefficient duringintersubband transitions between hole states has been analyzed. The results show that an electric field combined with an off-center impurity induces the appearance of two distinct absorption bandscorresponding to different magnetic quantum numbers. The intensity of absorption bands dependson the direction and strength of the electric field, and significant differences are observed betweenfields of opposite polarity. It is important to note that there is a critical field strength that restores thedegeneracy of the energy levels, narrowing the broadband absorption tail for systems with small or large dispersion sizes. This research aims to improve the understanding and optimization of the optical properties of nanomaterials