ELECTRON–HOLE EXCHANGE INTERACTION IN A SPHERICAL QUANTUM DOT WITH REGARD MATERIAL DEFORMATION AND POLARIZATION CHARGES

Abstract

The focus of the study is on the strained spherical quantum dot (QD) InAs/GaAs heterosystem. A singleband model of the conductive band for electrons and a multiband model of the valence band for holes have been applied. Both models take into account the deformation of the QD and matrix and polarization charges on the boundaries. The proposed models have been used for the calculation of the electron-hole exchange interaction.